Capacitance Converter (pF · nF · µF · mF · F)
Drop a capacitance value into any one bin of the SI prefix rack and the remaining four bins engrave themselves at the correct ×10³ factors. Each bin carries an application tag — RF, audio, decoupling, energy storage, memory backup — so you can spot at a glance whether the magnitude matches the use case.
Quick Conversion
Formula: µF = pF / 1,000,000
The SI Prefix Rack
What fits where on the rack
Conversion Table — µF → other prefixes
| µF | pF | nF | mF | F |
|---|---|---|---|---|
| 1 | 1.00e+6 | 1.00e+3 | 1.00e-3 | 1.00e-6 |
| 10 | 1.00e+7 | 1.00e+4 | 1.00e-2 | 1.00e-5 |
| 22 | 2.20e+7 | 2.20e+4 | 2.20e-2 | 2.20e-5 |
| 47 | 4.70e+7 | 4.70e+4 | 4.70e-2 | 4.70e-5 |
| 100 | 1.00e+8 | 1.00e+5 | 1.00e-1 | 1.00e-4 |
| 220 | 2.20e+8 | 2.20e+5 | 2.20e-1 | 2.20e-4 |
| 470 | 4.70e+8 | 4.70e+5 | 4.70e-1 | 4.70e-4 |
| 1000 | 1.00e+9 | 1.00e+6 | 1.00e+0 | 1.00e-3 |
| 2200 | 2.20e+9 | 2.20e+6 | 2.20e+0 | 2.20e-3 |
| 4700 | 4.70e+9 | 4.70e+6 | 4.70e+0 | 4.70e-3 |
| 10000 | 1.00e+10 | 1.00e+7 | 1.00e+1 | 1.00e-2 |
Need the charge? Go to Capacitance to Charge (Q = C × V).
Formula Card
value_to = value_from × 10^(exp_from − exp_to)Worked: 1000 pF → µF. exp_from = -12, exp_to = -6, so factor = 10^(-12 - -6) = 10⁻⁶. 1000 × 10⁻⁶ = 0.001 µF (= 1 nF).
1 F = 10³ mF = 10⁶ µF = 10⁹ nF = 10¹² pFThe SI prefix ladder steps in powers of 1000. Each rung is three decades.
Q = C × V (companion formula)Worked: 470 µF at 12 V → Q = 470 × 10⁻⁶ × 12 = 5.64 mC.
SI prefixes for capacitance (per BIPM SI brochure 9th ed.)
| Symbol | Name | Factor | 1 unit in F | Typical use |
|---|---|---|---|---|
| pF | picofarad | 10⁻¹² | 0.000000000001 F | RF, oscillator timing, antenna match |
| nF | nanofarad | 10⁻⁹ | 0.000000001 F | Audio coupling, snubbers, EMI filters |
| µF | microfarad | 10⁻⁶ | 0.000001 F | Power decoupling, motor start |
| mF | millifarad | 10⁻³ | 0.001 F | DC-link bulk, audio amp PSU |
| F | farad | 10⁰ | 1 F | Supercaps (EDLC), memory backup, regen |
How to use the prefix rack
- Pick the source bin. Tap pF, nF, µF, mF, or F to tell the rack which prefix your value is currently in.
- Type the value. Enter the number from your schematic, BOM, or silkscreen marking. The rack accepts any positive real number.
- Read the other four bins. Each non-active bin auto-engraves the equivalent value in its own prefix.
- Check the application tag. Every bin shows a domain label (RF, audio, decoupling, energy storage, memory) so you can spot a magnitude mismatch.
- Snapshot the conversion. The blue Snapshot button saves your entry to local history for cross-reference during the rest of the build.
From the Leyden jar to the supercapacitor — a brief history of the farad
In 2026, a junior PCB designer eyeballing a BOM that mixes "100n", "0u1", "4u7" and "3F" needs to ask whether all five values are physically realizable on the same board, and whether the magnitudes match the rails they decouple. The Metric Prefix Rack exists exactly for that moment: drop the BOM value in, see all five SI bins lit at once, and confirm with the application tag whether a 4.7 µF X7R or a 3 F EDLC is the right part. The rack is also pitched at students learning the SI system for the first time.
The earliest practical capacitor was the Leyden jar, demonstrated in 1745-1746 independently by Ewald Georg von Kleist in Pomerania and Pieter van Musschenbroek at the University of Leiden. The original glass-jar-with-foil device held perhaps 1 nF of capacitance at several kV — astonishing for the time and producing shocks vivid enough to be felt by a chain of 200 monks. The Leyden jar set the practical floor of capacitance technology at the nF level for over a century.
Michael Faraday at the Royal Institution in 1834 introduced the concept of "capacity" and the term "dielectric" — the medium between the plates. His work on what we now call relative permittivity (ε_r) explained why a Leyden jar with shellac between the foils stored more charge than one with air. The unit of capacitance — the farad — was named in his honour at the International Electrical Congress held during the 1881 Paris Exhibition. The committee chose the abbreviation F over Faraday's own preferred symbol.
The SI system formalized the prefix ladder in 1960 at the 11th CGPM in Paris, when the General Conference on Weights and Measures locked in the modern prefix names: pico (p, 10⁻¹²), nano (n, 10⁻⁹), micro (µ, 10⁻⁶), milli (m, 10⁻³). The farad itself had been derived in 1881; the milestone of 1960 was making the prefix-to-power-of-ten mapping internationally uniform. Before 1960, US schematics still used "MF" for microfarads — a confusing legacy that survived in vintage Fender guitar amplifier schematics into the 1970s.
The aluminium electrolytic capacitor, invented around 1875 by Charles Pollak and commercialised industrially in the 1920s, was the first device to push capacitance into the µF and mF range. By 1960 a 4700 µF / 50 V can was a standard part on TV-set PSU boards. The dielectric (a 0.01 µm aluminium oxide layer grown anodically) is the thinnest natural dielectric in any practical capacitor — which is why electrolytics achieve such high capacitance per volume but at modest voltage.
The supercapacitor or EDLC (Electric Double-Layer Capacitor) was patented by General Electric in 1957 and commercialised by Nippon Electric Company (NEC) in 1971. By 2026, leading-edge devices from Maxwell Technologies (now Tesla), Skeleton Technologies, and CAP-XX deliver 3000 F per cell at 2.85 V — pushing the once-theoretical farad into routine consumer use. The mF and F bins on the rack existed mostly as mathematical possibilities until the supercap commercialisation era; today they are real BOM lines on every EV and grid-scale energy buffer.
The IEC 60384 standard (Fixed Capacitors for Use in Electronic Equipment), first published in 1962 and now in its 7th edition, mandates that nameplate values use SI prefixes only — pF, nF, µF, mF, F — and codifies the tolerance letters (F=±1%, G=±2%, J=±5%, K=±10%, M=±20%) that appear on every modern silkscreen. The prefix rack matches this standard exactly so that a value read off an IEC-compliant BOM converts cleanly across the rack's five bins.
What does the rack reading really mean?
10 uF is the same physical quantity as 1.000e+7 pF, 10000.0000 nF, 10.0000 µF, 0.01000 mF, and 0.0000100 F. The application tag on the active bin tells you whether the magnitude is realistic for the use case — a µF in an RF antenna match is almost always a typo for pF, and a pF on a 12 V DC-link rail is meaninglessly small. Use the rack to spot magnitude mismatches before you order the parts.
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What capacitor specialists say
“I spec 0.5 pF / 1 pF C0G caps every day for 28 GHz matching networks. The rack's pF bin with its "RF / microwave" tag is exactly the mental model my interns need. Auto-populating the µF bin is hilariously useful as a sanity check — you should never see a µF in an antenna match.”
“The nF bin tag "audio coupling" is the cleanest framing I have ever seen. I run RIAA networks with 1.5 nF and 47 nF film caps; this tool finally bridges the gap between the schematic value and the SI scale for my apprentice. The decoupling-vs-coupling distinction is now teachable.”
“For DC-link bulk filtering on 800 V SiC inverter stages I work in the mF region. The rack's mF bin and its "energy storage" tag is the exact framing. I use the tool with junior layout designers to make sure they don't accidentally type µF when they mean mF.”
“I work at the F bin every day with Maxwell BCAP3000 and Skeleton SkelCap modules. Having the "memory backup / regen" tag right there alongside the value is exactly the application framing I want shown to a new hire. Saves explaining the same thing 50 times.”
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